WEEK 1 TASK 2, determine the oxide relative permittivity

In task 1, we identify the type of substrate which is p-type, so that the oxide capacitor is measured in the accumulation region where the corresponding C-V curve is nearly flat and the capacitor is nearly constant. Therefore, the MOS capacitor can be represented by an equivalent circuit comprising the oxide capacitor and the accumulation layer which are in series:

Due to a very high value for Cacc, we only observes the value of Cox for the measured capacitance in the accumulation region of a C-V plot. This enables the thickness of the oxide to be extracted:

where Cox is the capacitance per unit area and Ac is the capacitor area.

Cox is formed by two layer which are SiO2 and high-k

From TASK 1, the Cmax is 1081 pF, and from project specification, the diameter of MOS capacitors is 0.38 mm.

So that, we got